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ADVANCED POWER ELECTRONICS AP6N090N
AP6N090N,ADVANCED POWER ELECTRONICS,POWER FIELD-EFFECT TRANSISTOR 2.5A I(D) 60V 0.09OHM 1-ELEMENT N-CHANNEL SILICON METAL-OXIDE SEMICONDUCTOR FET
AP6N090N BY ADVANCED POWER ELECTRONICS IS AN N-CHANNEL MOSFET FEATURING 2.5A DRAIN CURRENT 60V DRAIN-SOURCE VOLTAGE 0.09 OHM RDS(ON) SINGLE ELEMENT SILICON METAL-OXIDE SEMICONDUCTOR CONSTRUCTION.