GENERAL SEMICONDUCTOR BZX384B9V1-E3-08

BZX384B9V1-E3-08 BY GENERAL SEMICONDUCTOR (VISHAY) IS A 9V ZENER DIODE WITH A MAXIMUM POWER DISSIPATION OF 500MW A TEST CURRENT OF 1MA AND A BREAKDOWN VOLTAGE OF 8.2V TO 8.8V SUITABLE FOR VOLTAGE REGULATION AND PROTECTION APPLICATIONS.