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NEXPERIA NX2301P215

NX2301P215 by NEXPERIA is a P-Channel TrenchMOS FET with 20V, 120mOhm RDS(on), 400mW power dissipation, in SOT-23 package, operating from -55°C to 150°C.

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Technical

Packaging
Tape & Reel
Lifecycle Status
Production (Last Updated: 2 months ago)
Power Dissipation
0.4 W
Gate to Source Voltage (Vgs)
8 V
Continuous Drain Current (ID)
-2 A
Drain to Source Voltage (Vdss)
-20 V

购买

是否有货
12,000
Ships in 16 Days
12,000

Lead Time (weeks)
20

单价
$0.378675
Total Price
$1,136.025
Minimum: 3,000
Multiples: 3,000
Quantity must be in multiples of 3,000
询价
1 - 5,999
$0.378675
6,000 - 8,999
$0.378675
9,000 - 11,999
$0.371663
12,000 +
$0.265073

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