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NEXPERIA PSMN2R6-40YS115

POWER FIELD-EFFECT TRANSISTOR 100A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

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Technical

Lifecycle Status
Production (Last Updated: 2 months ago)
Packaging
Tape & Reel
Power Dissipation
131 W
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
100 A
Drain to Source Voltage (Vdss)
40 V

购买

是否有货
3,000
Ships in 16 Days
3,000

单价
$4.4319
Total Price
$6,647.85
Minimum: 1,500
Multiples: 1,500
Quantity must be in multiples of 1,500
询价

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