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NXP SEMICONDUCTORS BSH112
BSH112,NXP SEMICONDUCTORS,POWER FIELD-EFFECT TRANSISTOR 0.3A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET
BSH112 BY NXP SEMICONDUCTORS IS AN N-CHANNEL MOSFET POWER TRANSISTOR WITH 0.3A DRAIN CURRENT LOW ON-RESISTANCE SINGLE ELEMENT SUITABLE FOR SWITCHING APPLICATIONS AND HOUSED IN A COMPACT SOT23 PACKAGE.