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NXP SEMICONDUCTORS MRFE6VP6300HR3

RF POWER TRANSISTOR 1.8 TO 600 MHZ 300 W TYP GAIN IN DB IS 25 @ 130 MHZ 50 V LDMOS SOT1827

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Technical

RoHS
Compliant
Element Configuration
Single
Mount
Screw, Surface Mount
Number of Pins
780
Number of Elements
2
Power Dissipation
1050 W
Gate to Source Voltage (Vgs)
10 V
Drain to Source Voltage (Vdss)
130 V

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