AFGH4L40T120RWD,ONSEMI,INSULATED GATE BIPOLAR TRANSISTOR 80A I(C) 1200V V(BR)CES N-CHANNEL TO-247
AFGH4L40T120RWD BY ONSEMI IS AN N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR RATED AT 80A COLLECTOR CURRENT AND 1200V BREAKDOWN VOLTAGE IN A TO-247 PACKAGE IDEAL FOR HIGH-POWER SWITCHING APPLICATIONS.
.png){kind=logo}