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ONSEMI ATP113-TL-H

POWER FIELD-EFFECT TRANSISTOR 35A I(D) 1-ELEMENT P-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

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Technical

Lead Free
Lead Free
Packaging
Tape and Reel
Lifecycle Status
Production (Last Updated: 3 years ago)
Rds On Max
0.0295 Ω
Input Capacitance
0 F
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
35 A
Drain to Source Voltage (Vdss)
60 V

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