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ONSEMI FDS8878-F123
FDS8878-F123,ONSEMI,POWER FIELD-EFFECT TRANSISTOR 10.2A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET
FDS8878-F123 BY ONSEMI IS AN N-CHANNEL MOSFET WITH 10.2A DRAIN CURRENT 30V DRAIN-SOURCE VOLTAGE LOW RDS(ON) SINGLE ELEMENT AND HOUSED IN A POWERTRENCH PACKAGE FOR EFFICIENT POWER SWITCHING APPLICATIONS.