FGA30T65SHD,ONSEMI,TRANS IGBT CHIP N=-CH 650V 60A 238000MW 3-PIN(3+TAB) TO-3PN RAIL
FGA30T65SHD BY ONSEMI IS AN N-CHANNEL IGBT TRANSISTOR RATED AT 650V 60A WITH 238000MW POWER DISSIPATION IN A 3-PIN PLUS TAB TO-3PN PACKAGE IDEAL FOR HIGH-EFFICIENCY SWITCHING APPLICATIONS.
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