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ONSEMI FQA11N90-F109

N-CHANNEL POWER MOSFET QFET® 900V 11.4A 960MΩ TO-3P

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Technical

RoHS
Compliant
Lead Free
Lead Free
Lifecycle Status
Production (Last Updated: 3 years ago)
Mount
Through Hole
Element Configuration
Single
Number of Pins
3
Number of Channels
1
Number of Elements
1
Rds On Max
0.96 Ω
Power Dissipation
300 W
Input Capacitance
0 F
Gate to Source Voltage (Vgs)
30 V
Continuous Drain Current (ID)
11.4 A
Drain to Source Voltage (Vdss)
900 V

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