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ONSEMI FQB4N80TM

MOSFET TRANSISTOR N CHANNEL 3.9 A 800 V 2.8 OHM 10 V 5 V

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Technical

RoHS
Compliant
Lead Free
Lead Free
Mount
Surface Mount
Case/Package
D2PAK
Lifecycle Status
Production (Last Updated: 3 years ago)
Contact Plating
Tin
Element Configuration
Single
Number of Pins
3
Number of Elements
1
Rds On Max
3.6 Ω
Power Dissipation
3.13 W
Threshold Voltage
5 V
Input Capacitance
0.88 F
Gate to Source Voltage (Vgs)
30 V
Continuous Drain Current (ID)
3.9 A
Drain to Source Voltage (Vdss)
800 V

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