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ONSEMI NTH4L040N120SC1

NTH4L040N120SC1 by ONSEMI is an N-channel SiC MOSFET with 1200V Vdss, 58A Id, 319W power dissipation, and 25V Vgs, featuring a TO-247-4L package for high-efficiency power applications.

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Technical

Lifecycle Status
Production (Last Updated: 3 years ago)
Power Dissipation
319 W
Gate to Source Voltage (Vgs)
25 V
Continuous Drain Current (ID)
58 A
Drain to Source Voltage (Vdss)
1200 V

购买

是否有货
334
Ships in 16 Days
334

Lead Time (weeks)
17

单价
$18.386775
Total Price
$6,141.18285
Minimum: 334
Multiples: 450
Quantity must be in multiples of 450
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