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ONSEMI NTMFD4C820NAT1G
NTMFD4C820NAT1G,ONSEMI,POWER FIELD-EFFECT TRANSISTOR 9.1A I(D) 30V 0.0108OHM 2-ELEMENT N-CHANNEL SILICON METAL-OXIDE SEMICONDUCTOR FET
NTMFD4C820NAT1G BY ONSEMI IS A DUAL N-CHANNEL MOSFET WITH 9.1A DRAIN CURRENT 30V DRAIN-SOURCE VOLTAGE 0.0108 OHM RDS(ON) SILICON METAL-OXIDE CONSTRUCTION AND HOUSED IN A COMPACT PACKAGE FOR EFFICIENT POWER SWITCHING.