.png){kind=logo}
ONSEMI NTMFS4C806NT1G
NTMFS4C806NT1G,ONSEMI,POWER FIELD-EFFECT TRANSISTOR 11A I(D) 30V 0.00341OHM 1-ELEMENT N-CHANNEL SILICON METAL-OXIDE SEMICONDUCTOR FET
NTMFS4C806NT1G BY ONSEMI IS AN N-CHANNEL MOSFET WITH 11A DRAIN CURRENT 30V DRAIN-SOURCE VOLTAGE 0.00341 OHM RDS(ON) SINGLE ELEMENT SILICON METAL-OXIDE CONSTRUCTION IDEAL FOR POWER SWITCHING APPLICATIONS.