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ONSEMI NVBG080N120SC1

NVBG080N120SC1 by ONSEMI is a silicon carbide N-channel MOSFET with 1200V Vdss, 30A Id, 0.08Ω Rds(on), 179W power dissipation, and operates from -55°C to 175°C in a D2PAK-7L package.

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Technical

RoHS
Compliant
Lifecycle Status
Production (Last Updated: 3 years ago)
Number of Channels
1
Power Dissipation
179 W
Gate to Source Voltage (Vgs)
25 V
Continuous Drain Current (ID)
30 A
Drain to Source Voltage (Vdss)
1200 V

购买

是否有货
800
Ships in 16 Days
800

Lead Time (weeks)
16

单价
$7.9662
Total Price
$6,372.96
Minimum: 800
Multiples: 800
Quantity must be in multiples of 800
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