主页产品分立半导体晶体管 MOSFET NVBG160N120SC1

ONSEMI NVBG160N120SC1

SILICON CARBIDE (SIC) MOSFET N‐CHANNEL - ELITESIC 160 MOHM 1200 V M1 D2PAK−7L

产品详情

Lifecycle Status

Production (Last Updated: 3 years ago)

Power Dissipation

136 W

Gate to Source Voltage (Vgs)

25 V

Continuous Drain Current (ID)

19.5 A

Drain to Source Voltage (Vdss)

1200 V

Lead Time (weeks)

Expected Ship Date

9/25/26

单价

$9.074175

Total Price

$9.074175

Multiples: 2

1 - 19

$9.074175

20 - 49

$8.976

50 - 799

$8.9199

800 +

$8.72355