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ONSEMI NVMFD020N10MCLT1G
NVMFD020N10MCLT1G,ONSEMI,POWER FIELD-EFFECT TRANSISTOR 35A I(D) 100V 0.02OHM 1-ELEMENT N-CHANNEL SILICON METAL-OXIDE SEMICONDUCTOR FET
NVMFD020N10MCLT1G BY ONSEMI IS A POWER N-CHANNEL MOSFET FEATURING 35A DRAIN CURRENT 100V DRAIN-SOURCE VOLTAGE 0.02 OHM RDS(ON) SINGLE ELEMENT SILICON METAL-OXIDE CONSTRUCTION IDEAL FOR HIGH-EFFICIENCY SWITCHING APPLICATIONS.