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RENESAS NE5520379A-T1A
NE5520379A-T1A,RENESAS,RF POWER FIELD-EFFECT TRANSISTOR 1-ELEMENT L BAND SILICON N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET
NE5520379A-T1A BY RENESAS IS AN L-BAND RF POWER FIELD-EFFECT TRANSISTOR FEATURING A SINGLE N-CHANNEL SILICON MOSFET ELEMENT DESIGNED FOR HIGH-FREQUENCY AMPLIFICATION AND EFFICIENT POWER HANDLING IN RF APPLICATIONS.