主页产品分立半导体晶体管 MOSFET SISS61DN-T1-GE3

VISHAY SILICONIX SISS61DN-T1-GE3

SISS61DN-T1-GE3 by SILICONIX (VISHAY) is a N-channel MOSFET with 60V drain-source voltage, 20A continuous drain current, 4.5V gate threshold, and low on-resistance, ideal for power management applications.

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是否有货

18,000

Ships in 16 Days

18,000

Lead Time (weeks)

单价

$0.911625

Total Price

$2,734.875

Minimum: 3,000

Multiples: 3,000

询价

1 - 5,999

$0.911625

6,000 - 8,999

$0.904613

9,000 - 11,999

$0.8976

12,000 +

$0.890588

VISHAY SILICONIX SISS61DN-T1-GE3

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