SIZ918DT-T1-GE3 by SILICONIX (VISHAY) is a dual N-channel MOSFET with 30V Vds, 13A Id, 4.5mOhm Rds(on), and 2.5V Vgs(th), ideal for high-efficiency power management applications.
IBS Electronics uses cookies and similar technologies to gather data pertaining to your interactions and communications with our websites and services, encompassing session replay and chat session recordings. By continuing to use our websites, you signify your agreement with the terms stated in our Privacy Policy, express your consent for the use of cookies, tags, pixels, beacons, and other technologies, and confirm your acceptance of our website's Terms of Use.
.png){kind=logo}
