主页产品分立半导体晶体管 MOSFET SI4058DY-T1-GE3

VISHAY SI4058DY-T1-GE3

MOSFET N-CH 100V 10.3A SOIC ROHS COMPLIANT: YES |VISHAY SI4058DY-T1-GE3

产品详情

Power Dissipation

5.6 W

Gate to Source Voltage (Vgs)

20 V

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

10.3 A

Lead Time (weeks)

Expected Ship Date

3/5/27

单价

$0.967725

Total Price

$0.967725

Multiples: 2,500

1 - 4,999

$0.967725

5,000 +

$0.575025