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VISHAY SI7856DP-T1
SI7856DP-T1,VISHAY,POWER FIELD-EFFECT TRANSISTOR 14A I(D) 30V 0.0045OHM 1-ELEMENT N-CHANNEL SILICON METAL-OXIDE SEMICONDUCTOR FET
SI7856DP-T1 BY VISHAY IS AN N-CHANNEL MOSFET WITH 14A DRAIN CURRENT 30V DRAIN-SOURCE VOLTAGE 0.0045 OHM RDS(ON) SINGLE ELEMENT SILICON METAL-OXIDE CONSTRUCTION IDEAL FOR POWER SWITCHING APPLICATIONS.