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VISHAY SIHB18N60E-GE3

SIHB18N60E-GE3 BY VISHAY IS A HIGH-VOLTAGE N-CHANNEL MOSFET WITH A DRAIN-SOURCE VOLTAGE OF 600V CONTINUOUS DRAIN CURRENT OF 18A RDS(ON) OF 0.18 AND A MAXIMUM GATE THRESHOLD OF 2V SUITABLE FOR POWER SWITCHING APPLICATIONS.

购买


Lead Time (weeks)
19
Expected Ship Date
10/16/26

单价
$2.706825
Total Price
$2.706825
询价
1 - 9
$2.706825
10 - 39
$2.622675
40 - 149
$2.5806
150 - 499
$2.5245
500 +
$2.4684

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